Subhalf-micron lithography system with phase-shifting effect

Miyoko Noguchi; Masato Muraki; Yuichi Iwasaki; Akiyoshi Suzuki

doi:10.1117/12.130312

1 June 1992 Subhalf-micron lithography system with phase-shifting effect

Miyoko Noguchi, Masato Muraki, Yuichi Iwasaki, Akiyoshi Suzuki

Proceedings Volume 1674, Optical/Laser Microlithography V; (1992) https://doi.org/10.1117/12.130312
Event: Microlithography '92, 1992, San Jose, CA, United States

Abstract

We propose in this paper a new imaging technology for the 64M DRAM, named "CQUEST” (Canon Ql/adrupole Effect for Stepper Technology). CQUEST is derived from the mathematical analysis of the partial coherence theory1. It can provide almost the same effects with conventional masks as those that result using phase shift masks. Therefore, it is a promising candidate for next generation lithography. Simulation and some experimental results will be shown to substantiate the above. As shown in the results, the 64M DRAM process can be achieved with the existing i-line technology.

Citation Download Citation

Miyoko Noguchi, Masato Muraki, Yuichi Iwasaki, and Akiyoshi Suzuki "Subhalf-micron lithography system with phase-shifting effect", Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); https://doi.org/10.1117/12.130312

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available