Reduction of inelastic longitudinal-optical phonon scattering in narrow polar-semiconductor quantum wells

Michael A. Stroscio; Ki Wook Kim; Amit R. Bhatt; Gerald J. Iafrate; Mitra B. Dutta; Harold L. Grubin

doi:10.1117/12.137613

3 September 1992 Reduction of inelastic longitudinal-optical phonon scattering in narrow polar-semiconductor quantum wells

Michael A. Stroscio, Ki Wook Kim, Amit R. Bhatt, Gerald J. Iafrate, Mitra B. Dutta, Harold L. Grubin

Author Affiliations +

Proceedings Volume 1675, Quantum Well and Superlattice Physics IV; (1992) https://doi.org/10.1117/12.137613
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

In this paper, it is demonstrated that establishing metal-semiconductor interfaces at the heterojunctions of polar semiconductor quantum wells introduces a set of boundary conditions that dramatically reduces or eliminates unwanted carrier energy loss caused by interactions with interface longitudinal-optical (LO) phonon modes.

Citation Download Citation

Michael A. Stroscio, Ki Wook Kim, Amit R. Bhatt, Gerald J. Iafrate, Mitra B. Dutta, and Harold L. Grubin "Reduction of inelastic longitudinal-optical phonon scattering in narrow polar-semiconductor quantum wells", Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); https://doi.org/10.1117/12.137613

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