Translator Disclaimer
Paper
3 September 1992 Reduction of inelastic longitudinal-optical phonon scattering in narrow polar-semiconductor quantum wells
Author Affiliations +
Proceedings Volume 1675, Quantum Well and Superlattice Physics IV; (1992) https://doi.org/10.1117/12.137613
Event: Semiconductors '92, 1992, Somerset, NJ, United States
Abstract
In this paper, it is demonstrated that establishing metal-semiconductor interfaces at the heterojunctions of polar semiconductor quantum wells introduces a set of boundary conditions that dramatically reduces or eliminates unwanted carrier energy loss caused by interactions with interface longitudinal-optical (LO) phonon modes.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael A. Stroscio, Ki Wook Kim, Amit R. Bhatt, Gerald J. Iafrate, Mitra B. Dutta, and Harold L. Grubin "Reduction of inelastic longitudinal-optical phonon scattering in narrow polar-semiconductor quantum wells", Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); https://doi.org/10.1117/12.137613
PROCEEDINGS
5 PAGES


SHARE
Advertisement
Advertisement
Back to Top