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2 September 1992 Photoluminescence and Raman scattering studies of GaAs-AlGaAs quantum dots
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We present experimental and theoretical results on the low temperature luminescence intensity of dry etched GaAs-AlxGa1-xAs quantum dots. The luminescence intensity was found to decrease by two orders of magnitude with the decrease of dot sizes from 1 micrometers to 60 nm. Our intrinsic model of the emission yield invokes slower momentum and energy relaxation mechanisms as the lateral dimensions decrease. The extrinsic effect, which we include in our interpretation of the luminescence intensity, involves carrier diffusion with a surface nonradiative recombination velocity. The combined effect (intrinsic and extrinsic) gives a very good fit to our data. The surface recombination velocity needed for the fit was approximately 105 cm/s. Raman studies on the quantum dots showed enhanced surface phonons with the decrease of the nanostructure sizes. `GaAs'-like and `AlAs'-like surface phonons were also observed for the first time in etched nanostructures, in good agreement with the theoretical predications.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peidong D. Wang, Cliva M. Sotomayor-Torres, H. McLelland, Stephen Thoms, Steven P. Beaumont, Chris D. W. Wilkinson, Alistair Kean, C. R. Stanley, H. Benisty, and Claude Weisbuch "Photoluminescence and Raman scattering studies of GaAs-AlGaAs quantum dots", Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992);

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