Zero-dimensional states in nanostructures constricted by double-barrier heterojunctions and H-isolation

Marleen Van Hove

doi:10.1117/12.137658

2 September 1992 Zero-dimensional states in nanostructures constricted by double-barrier heterojunctions and H-isolation

Marleen Van Hove

Author Affiliations +

Proceedings Volume 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication; (1992) https://doi.org/10.1117/12.137658
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

The lateral dimensions of resonant tunneling AlGaAs-GaAs double barrier heterostructures have been restricted by hydrogen plasma exposure. Ohmic contacts to the submicron diodes have been made by solid phase epitaxial growth of Ge on GaAs. The current-voltage characteristics show a fine structure splitting that is inversely proportional to the lateral size of the diode. The results are interpreted as resonant tunneling through zero-dimensional states in the quantum box confined by the AlGaAs barriers and a harmonic lateral confining potential.

Citation Download Citation

Marleen Van Hove "Zero-dimensional states in nanostructures constricted by double-barrier heterojunctions and H-isolation", Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992); https://doi.org/10.1117/12.137658

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