Ultrafast recombination in H+-bombarded InP and GaAs: consequences for the carrier distribution functions

Karl Franz Lamprecht; Simon Juen; Leopold Palmetshofer; Ralph A. Hoepfel

doi:10.1117/12.137679

21 October 1992 Ultrafast recombination in H⁺-bombarded InP and GaAs: consequences for the carrier distribution functions

Karl Franz Lamprecht, Simon Juen, Leopold Palmetshofer, Ralph A. Hoepfel

Author Affiliations +

Proceedings Volume 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors; (1992) https://doi.org/10.1117/12.137679
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

We studied the lifetimes and the luminescence spectra of photoexcited carriers in H⁺ bombarded InP and GaAs for different damage doses by means of femtosecond luminescence spectroscopy. For InP the lifetime decreases down to 95 fs for the highest dose, whereas for GaAs no shorter lifetime than 650 fs could be observed. With decreasing lifetime we observe an increase of the high energy tail of the time-integrated luminescence spectrum which is even inverted for the 95 fs InP sample.

Citation Download Citation

Karl Franz Lamprecht, Simon Juen, Leopold Palmetshofer, and Ralph A. Hoepfel "Ultrafast recombination in H⁺-bombarded InP and GaAs: consequences for the carrier distribution functions", Proc. SPIE 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors, (21 October 1992); https://doi.org/10.1117/12.137679

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