High-resolution x-ray diffraction analysis of thin III-V layers and quantum wires (Invited Paper)

Leander Tapfer

doi:10.1117/12.60437

1 July 1992 High-resolution x-ray diffraction analysis of thin III-V layers and quantum wires (Invited Paper)

Leander Tapfer

Proceedings Volume 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV; (1992) https://doi.org/10.1117/12.60437
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

The x-ray diffraction from very thin buried semiconductor layers (Angstrom level) and from quantum wires are reviewed. The structural properties like layer thickness, chemical composition, lattice strain and the onset of strain relaxation are investigated analyzing the experimental data by using a computer simulation based on a dynamical diffraction model. The experimental diffraction patterns on quantum wires exhibit satellite peaks which are analyzed by using a kinematical diffraction model. An elastic strain relaxation of the quantum wires which results in an orthorhombic unit cell deformation is observed.

Citation Download Citation

Leander Tapfer "High-resolution x-ray diffraction analysis of thin III-V layers and quantum wires (Invited Paper)", Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); https://doi.org/10.1117/12.60437

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