In-situ characterization of thin film semiconductors by spectroellipsometry from ultraviolet to infrared

Bernard Drevillon

doi:10.1117/12.60460

1 July 1992 In-situ characterization of thin film semiconductors by spectroellipsometry from ultraviolet to infrared

Bernard Drevillon

Proceedings Volume 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV; (1992) https://doi.org/10.1117/12.60460
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

Recent applications of spectroscopic phase modulated ellipsometry, from UV to IR, to the study of the growth of plasma deposited thin film semiconductors like amorphous (a-Si:H) and microcrystalline ((mu) c-Si) silicon are reviewed. The high sensitivity of this technique is emphasized. In the UV range, the ability of kinetic ellipsometry, with fast time resolution, to study the complex growth mechanism of (mu) c-Si is illustrated. In particular, the importance of hydrogen etching during (mu) c-Si growth is evidenced. In the IR, the hydrogen incorporation during a-Si:H growth can be precisely investigated. Photoelectronic quality a- Si:H films grow beneath a hydrogen rich overlayer (1-3 monolayers thick) containing SiH₂, the hydrogen being bonded as SiH in the bulk material.

Citation Download Citation

Bernard Drevillon "In-situ characterization of thin film semiconductors by spectroellipsometry from ultraviolet to infrared", Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); https://doi.org/10.1117/12.60460

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