Paper
1 July 1992 Temperature dependence of the 11H photoreflectance lineshape in an (001) In0.21Ga0.79As/GaAs single quantum well
Hao Qiang, Yufei S. Huang, Fred H. Pollak, G. D. Pettit, Jerry M. Woodall
Author Affiliations +
Abstract
The photoreflectance lineshape of the 11H exciton peak in an In0.21Ga0.79As/GaAs single quantum well was measured from 10 K to 500 K. In contrast to the GaAs/GaAlAs system our 10 K data exhibited no `wings' and can be fit equally well by the first-derivative of a Gaussian or Lorentzian profile. The former is probably relevant since the well material is an alloy. These results indicate that care must be taken in associating spectra without pronounced `wings' with the Lorentzian profile. The temperature dependence of the 11H linewidth, which has been fit to a Bose-Einstein expression, yields important information about the quality of the material and interface. The variation of the energy of 11H with temperature agrees with that of bulk material.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hao Qiang, Yufei S. Huang, Fred H. Pollak, G. D. Pettit, and Jerry M. Woodall "Temperature dependence of the 11H photoreflectance lineshape in an (001) In0.21Ga0.79As/GaAs single quantum well", Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); https://doi.org/10.1117/12.60453
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KEYWORDS
Quantum wells

Excitons

Modulation

Oscillators

Dielectrics

Solids

Interfaces

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