Translator Disclaimer
Paper
1 July 1992 Temperature dependence of silicon photodiode quantum efficiency: theoretical and experimental results
Author Affiliations +
Abstract
The temperature dependence of photodiodes quantum efficiency for different processes (deep diffused and ion implanted) and resistivities (10 and 100 (Omega) .cm) were measured. To better predict their behavior, a comparison was made with a simple uni-dimensional p-n junction model. This includes band-gap, depletion region width, diffusion constants, mobilities, intrinsic carrier concentration, absorption coefficient, and refractive index temperature functions. The surface recombination length of the minority carriers and the concentration of recombination centers were fitted to the experimental data.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thierry P. Appourchaux, Didier D. E. Martin, and Udo Telljohann "Temperature dependence of silicon photodiode quantum efficiency: theoretical and experimental results", Proc. SPIE 1679, Physics and Simulation of Optoelectronic Devices, (1 July 1992); https://doi.org/10.1117/12.60488
PROCEEDINGS
12 PAGES


SHARE
Advertisement
Advertisement
Back to Top