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3 September 1992 16-GHz GaAs/AlGaAs multiple-quantum-well laser with vertically compact waveguide structure
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Proceedings Volume 1680, High-Speed Electronics and Optoelectronics; (1992) https://doi.org/10.1117/12.137711
Event: Semiconductors '92, 1992, Somerset, NJ, United States
Abstract
A GaAs/AlxGa1-xAs multiple quantum well laser with a 3 dB electrical modulation bandwidth of 16 GHz has been developed. Optimized design of the waveguide, including implementation of high average Al mole fraction (xeff equals 0.8) GaAs/AlAs binary short-period superlattice cladding layers, together with a coplanar electrode geometry, has resulted in a vertically compact laser structure suitable for integration.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John D. Ralston, Ignacio Esquivias, S. Weisser, Dominic F. G. Gallagher, Paul J. Tasker, Eric C. Larkins, Josef Rosenzweig, Hans P. Zappe, Joachim Fleissner, and Donat Josef As "16-GHz GaAs/AlGaAs multiple-quantum-well laser with vertically compact waveguide structure", Proc. SPIE 1680, High-Speed Electronics and Optoelectronics, (3 September 1992); https://doi.org/10.1117/12.137711
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