Translator Disclaimer
Paper
3 September 1992 Advanced-power and low-noise HEMT devices and MMICs
Author Affiliations +
Proceedings Volume 1680, High-Speed Electronics and Optoelectronics; (1992) https://doi.org/10.1117/12.137717
Event: Semiconductors '92, 1992, Somerset, NJ, United States
Abstract
Advanced high electron mobility transistors (HEMTs) and MMICs, currently under development at GE for a variety of power and low noise applications at frequencies ranging from 1 to 100 GHz, is reviewed, and future trends are projected.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. C. Chao, P. M. Smith, and J. M. Ballingall "Advanced-power and low-noise HEMT devices and MMICs", Proc. SPIE 1680, High-Speed Electronics and Optoelectronics, (3 September 1992); https://doi.org/10.1117/12.137717
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
Back to Top