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12 August 1992 HgCdTe on Si for monolithic focal plane arrays
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Abstract
HgCdTe was grown on Si substrates containing CCD and CMOS readout (R/O) circuits. Evaporated aluminum (Al) thin films were used to interconnect MWIR HgCdTe detector arrays with 1 X 64 scanned R/Os to demonstrate monolithic integration and eliminate indium bump bonds required to fabricate hybrid infrared focal plane arrays (IRFPAs). Conformal electroplated gold (Au) thin films on 32 X 64 staring arrays were used to integrate isolated MWIR HgCdTe detectors in each of the 100 micrometers X 100 micrometers unit cells to the input of the CMOS R/Os. Five micron wide Au thin films were used to make a conformal interconnect to 10 micrometers high HgCdTe layers in 40 micrometers X 40 micrometers unit cells within 256 X 256 arrays. Multiple thin film interconnects do not limit the size of the unit cell for dual band and multispectral staring arrays.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kenneth R. Zanio, Reed B. Mattson, Muren Chu, and Sevag Terterian "HgCdTe on Si for monolithic focal plane arrays", Proc. SPIE 1683, Infrared Focal Plane Array Producibility and Related Materials, (12 August 1992); https://doi.org/10.1117/12.137770
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