Evaluation of GaAs FETs for cryogenic readout

Randall K. Kirschman; Sony V. Lemoff; John A. Lipa

doi:10.1117/12.60500

1 July 1992 Evaluation of GaAs FETs for cryogenic readout

Randall K. Kirschman, Sony V. Lemoff, John A. Lipa

Proceedings Volume 1684, Infrared Readout Electronics; (1992) https://doi.org/10.1117/12.60500
Event: Aerospace Sensing, 1992, Orlando, FL, United States

Abstract

Low-frequency, low-noise, low-power cryogenic electronics to read out photodetectors is being investigated for the star-tracking telescope of the Gravity Probe B spacecraft. We report our initial findings from evaluating more than 20 types of GaAs FETs, both commercial and non-commercial, for this application. Most exhibit useable dc characteristics at cryogenic temperatures, although gate leakage and hysteretic effects (presumably due to charge trapping) could be troublesome. Low-frequency noise (based primarily on grounded-gate measurements) at 4 K is '1/f-like' and for the quietest GaAs FETs appears to be at least as low as the lowest noise values reported for Si MOSFETs at 4 K. Further investigation is needed in several areas.

Citation Download Citation

Randall K. Kirschman, Sony V. Lemoff, and John A. Lipa "Evaluation of GaAs FETs for cryogenic readout", Proc. SPIE 1684, Infrared Readout Electronics, (1 July 1992); https://doi.org/10.1117/12.60500

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