Paper
1 September 1992 Comparative study of SWIR and MWIR Schottky-barrier imagers
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Abstract
A 512 pixel truly linear infrared (IR) charge coupled device (CCD) with Schottky barrier sensors and buttable edges has been developed, incorporating three different silicides working in the front-side illumination mode. The main differences between these silicides are the cut- off wavelength and the operating temperature. CoSi2 and NiSi show a cut-off wavelength of about 2.8 micrometers allowing an operating temperature of 150 K and passive cooling, whereas PtSi has a cut-off wavelength of about 6 micrometers working at 77 K. All three devices present a good photoresponse uniformity along the sensor row and also a good noise behavior.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Elisenda Roca, Jan P. Vermeiren, Cor L. Claeys, and Marino Fabbricotti "Comparative study of SWIR and MWIR Schottky-barrier imagers", Proc. SPIE 1685, Infrared Detectors and Focal Plane Arrays II, (1 September 1992); https://doi.org/10.1117/12.137803
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Cited by 1 scholarly publication.
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KEYWORDS
Charge-coupled devices

Quantum efficiency

Sensors

Infrared detectors

Staring arrays

Black bodies

Imaging systems

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