HgCdTe photovoltaic detectors and some related aspects

Fei Ming Tong; Henry X. Yuan; Xiuzhen Yang; Nuggehalli M. Ravindra

doi:10.1117/12.137795

1 September 1992 HgCdTe photovoltaic detectors and some related aspects

Fei Ming Tong, Henry X. Yuan, Xiuzhen Yang, Nuggehalli M. Ravindra

Proceedings Volume 1685, Infrared Detectors and Focal Plane Arrays II; (1992) https://doi.org/10.1117/12.137795
Event: Aerospace Sensing, 1992, Orlando, FL, United States

Abstract

Recent developments in HgCdTe photovoltaic detector technology are reviewed. The status of related areas in China are introduced. Some aspects of research work on device physics and technology conducted in the authors' laboratories are discussed. These include: the performance of HgCdTe photodiodes for IR fiber communication; the effects of field- enhanced generation-recombination and imperfections of the pn junction on HgCdTe photodiode I-V characteristics; and an analysis of the dependence of energy gap of HgCdTe on temperature and composition.

Citation Download Citation

Fei Ming Tong, Henry X. Yuan, Xiuzhen Yang, and Nuggehalli M. Ravindra "HgCdTe photovoltaic detectors and some related aspects", Proc. SPIE 1685, Infrared Detectors and Focal Plane Arrays II, (1 September 1992); https://doi.org/10.1117/12.137795

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