Paper
12 February 1993 Near-infrared (1-3 micron) InGaAs detectors and arrays - Crystal growth leakage current and reliability
Abhay M. Joshi, Gregory H. Olsen, S. M. Mason, M. Kazakia, Vladimir S. Ban
Author Affiliations +
Abstract
The hydride VPE technique was used to grow In(x)Ga(1-x)As/InAs(y)P(1-y) detectors optimized for 1.8 micron (x = 0.58, y = 0.08), 2.2 microns (x = 0.71, y = 0.36), and 2.6 microns (x = 0.82, y = 0.60) using several compositional grading techniques and several doping levels in the heteroepitaxial layers. Additionally, 1.7 micron In(0.53)Ga(0.47)As detectors were grown on GaAs and Si substrates to study the possibility of fabricating a monolithic linear InGaAs array. Single element detectors with 75 and 500 micron diameter, and 256 and 512 element detector arrays of (25 x 500) micron pixel sizes were fabricated. The best results include a room temperature leakage current of 500 pA at 10 mV back bias for a 2.2 micron cutoff, (25 x 500) micron array pixel. High reliability (12,000 hours at 125 C) has been observed for both In(x)Ga(1-x)As/InAs(y)P(1-y) and graded In(0.53)Ga(0.47)As detector structures grown on GaAs and Si substrates. The relationship between dislocation density, leakage current, and reliability is also discussed.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Abhay M. Joshi, Gregory H. Olsen, S. M. Mason, M. Kazakia, and Vladimir S. Ban "Near-infrared (1-3 micron) InGaAs detectors and arrays - Crystal growth leakage current and reliability", Proc. SPIE 1715, Optical Methods in Atmospheric Chemistry, (12 February 1993); https://doi.org/10.1117/12.140221
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Cited by 10 scholarly publications.
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KEYWORDS
Sensors

Indium gallium arsenide

Silicon

Reliability

Crystals

Gallium arsenide

Photodetectors

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