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1 April 1992 Direct laser doping of various materials
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Proceedings Volume 1723, LAMILADIS '91 Intl Workshop: Laser Microtechnology and Laser Diagnostics of Surfaces; (1992) https://doi.org/10.1117/12.58657
Event: LAMILADIS '91: International Workshop: Laser Microtechnology and Laser Diagnostics of Surfaces, 1991, Chernivsti, Ukraine
Abstract
Laser doping method has an attractive set of important advantages, very useful for microelectronics applications. Using this method we have obtained shallow and heavily doped p+ - n junctions, ohmic contacts, and interconnection lines. We have extended our laser method for Ti in-diffusion into LiNbO3, the common technique for optical waveguides fabrication.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Valentin Craciun, Ion N. Mihailescu, G. N. Mikhailova, A. S. Seferov, Mario Bertolotti, A. Ferrari, Armando Luches, Gilberto Leggieri, and Maurizio Martino "Direct laser doping of various materials", Proc. SPIE 1723, LAMILADIS '91 Intl Workshop: Laser Microtechnology and Laser Diagnostics of Surfaces, (1 April 1992); https://doi.org/10.1117/12.58657
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