Linewidth of GaInAsSb diode lasers

V. G. Avetisov; Amir N. Khusnutdinov; Alexander I. Nadezhdinskii; Yury P. Yakovlev; Alexej N. Baranov; A. I. Imenkov

doi:10.1117/12.140317

1 April 1992 Linewidth of GaInAsSb diode lasers

V. G. Avetisov, Amir N. Khusnutdinov, Alexander I. Nadezhdinskii, Yury P. Yakovlev, Alexej N. Baranov, A. I. Imenkov

Proceedings Volume 1724, Tunable Diode Laser Applications; (1992) https://doi.org/10.1117/12.140317
Event: Tunable Diode Laser Applications, 1993, Moscow, Russian Federation

Abstract

The linewidth of GaInAsSb diode lasers operating at 1.8-2.4 micron has been measured using gas absorption line as a frequency discriminator. The linewidth of the lasers varied from 3 to 60 MHz, could alter at least by an order of magnitude, and decrease as the temperature decreases and emission power increases. The results show that GaInAsSb lasers are suitable for high-resolution molecular spectroscopy.

Citation Download Citation

V. G. Avetisov, Amir N. Khusnutdinov, Alexander I. Nadezhdinskii, Yury P. Yakovlev, Alexej N. Baranov, and A. I. Imenkov "Linewidth of GaInAsSb diode lasers", Proc. SPIE 1724, Tunable Diode Laser Applications, (1 April 1992); https://doi.org/10.1117/12.140317

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