Optical and electrical properties of doped rf-sputtered SnOx films

B. A. Stjerna; Claes-Goeran Granqvist

doi:10.1117/12.130505

25 November 1992 Optical and electrical properties of doped rf-sputtered SnOx films

B. A. Stjerna, Claes-Goeran Granqvist

Proceedings Volume 1727, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XI: Selective Materials, Concentrators and Reflectors, Transparent Insulation and Superwindows; (1992) https://doi.org/10.1117/12.130505
Event: Optical Materials Technology for Energy Efficiency and Solar Energy, 1992, Toulouse-Labege, France

Abstract

SnO_x films doped with Sb and/or F were made by reactive rf magnetron sputtering of Sn and Sn/Sb alloys in Ar+O₂(+CF₄) onto glass. Electrical dc resistivity, mobility, free electron concentration, spectral optical properties, and structural properties were investigated as a function of sputtering parameters. Optimized deposition parameters gave SnO_x:(Sb,F) films with high luminous transmittance, low luminous absorptance, high IR reflectance and dc resistivity down to 9.1 (DOT)10^-4 (Omega) cm. X- ray diffraction investigations showed that the sputtered SnO_x films had a preferred direction of growth, dependent on the oxygen amount as well as specific kind of doping. The optical and electrical properties were quantitatively calculated from theories embodying ionized impurity scattering and Drude free-electron theory and compared to experimental measurements.

Citation Download Citation

B. A. Stjerna and Claes-Goeran Granqvist "Optical and electrical properties of doped rf-sputtered SnOx films", Proc. SPIE 1727, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XI: Selective Materials, Concentrators and Reflectors, Transparent Insulation and Superwindows, (25 November 1992); https://doi.org/10.1117/12.130505

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