640 x 480 PACE HgCdTe FPA

Lester J. Kozlowski; Robert B. Bailey; Scott A. Cabelli; Donald E. Cooper; Gail D. McComas; Kadri Vural; William E. Tennant

doi:10.1117/12.138620

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10 December 1992 640 x 480 Pace HgCdTe FPA

Lester J. Kozlowski, Robert B. Bailey, Scott A. Cabelli, Donald E. Cooper, Gail D. McComas, Kadri Vural, William E. Tennant

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Proceedings Volume 1735, Infrared Detectors: State of the Art; (1992) https://doi.org/10.1117/12.138620
Event: San Diego '92, 1992, San Diego, CA, United States

Abstract

A hybrid HgCdTe 640 X 480 infrared (IR) focal plane array (FPA) that meets the sensitivity, resolution, and field-of-view requirements of high-performance medium wavelength infrared (MWIR) imaging systems has been developed. The key technology making this large, high sensitivity device producible is the epitaxial growth of HgCdTe on a CdTe-buffered, sapphire substrate (referred to as PACE, for Producible Alternative to CdTe for Epitaxy; PACE-I refers to sapphire). The device offers TV resolution with excellent sensitivity at temperatures below 120 K. Mean NE(Delta) T as low as 13 mK has been achieved at operating temperatures < 130 K, which is about an order of magnitude better than has been achieved with PtSi 640 X 480 FPAs. In addition, the latter require cooling to <EQ 77 K. Mean PACE-I FPA D^* at 78 K and background of 10¹⁴ photons/cm²-sec is BLIP-limited at 1 X 10¹² cm-Hz^1/2/W for the typical mean quantum efficiency of 60 - 70%. Imagery having excellent quality has been obtained using simple two-point nonuniformity compensation.

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Lester J. Kozlowski, Robert B. Bailey, Scott A. Cabelli, Donald E. Cooper, Gail D. McComas, Kadri Vural, and William E. Tennant "640 x 480 Pace HgCdTe FPA", Proc. SPIE 1735, Infrared Detectors: State of the Art, (10 December 1992); https://doi.org/10.1117/12.138620

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