Infrared internal emission detectors

Freeman D. Shepherd

doi:10.1117/12.138629

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10 December 1992 Infrared internal emission detectors

Freeman D. Shepherd

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Proceedings Volume 1735, Infrared Detectors: State of the Art; (1992) https://doi.org/10.1117/12.138629
Event: San Diego '92, 1992, San Diego, CA, United States

Abstract

This paper will review the current state of the art of internal photoemission infrared detectors. That is, detectors which sense in a multi-step process, beginning with photon absorption in an electrode and terminating in emission of an excited carrier over a potential barrier into a semiconductor depletion region. Internal photoemission (PE) is a surface barrier sensing process similar to vacuum photoemission. This differs from competing bulk detection processes where both photoabsorption and carrier measurement takes place in the semiconductor. The PtSi/p-Si Schottky photodiode is the most advanced and best documented infrared PE device. Our interest is more general however and we will include devices where the photoemission 'electrode' may be a metal, a metal silicide or a degenerate semiconductor.

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Freeman D. Shepherd "Infrared internal emission detectors", Proc. SPIE 1735, Infrared Detectors: State of the Art, (10 December 1992); https://doi.org/10.1117/12.138629

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