Monolithic lead-chalcogenide IR-diode arrays on silicon: fabrication and use in thermal imaging applications

Jiri Masek; Taizo J. Hoshino; Clau Maissen; Hans Zogg; Stefan Blunier; Jan P. Vermeiren; Cor L. Claeys

doi:10.1117/12.138640

10 December 1992 Monolithic lead-chalcogenide IR-diode arrays on silicon: fabrication and use in thermal imaging applications

Jiri Masek, Taizo J. Hoshino, Clau Maissen, Hans Zogg, Stefan Blunier, Jan P. Vermeiren, Cor L. Claeys

Author Affiliations +

Proceedings Volume 1735, Infrared Detectors: State of the Art; (1992) https://doi.org/10.1117/12.138640
Event: San Diego '92, 1992, San Diego, CA, United States

Abstract

A narrow gap semiconductor layer grown directly on a Si-substrate is the preferable approach to realize large IR-focal plane arrays. We report on our new work on lead chalcogenide photovoltaic IR-detector arrays, grown monolithically on Si (111) substrates using a stacked CaF₂/BaF₂ buffer layer. The sensor fabrication process is described, and a simple thermal camera system is used to verify the functionality of our arrays. An epitaxial narrow gap lead chalcogenide layer of only 3 micrometers thickness is grown on an 0.3 micrometers thick CaF₂/BaF₂ buffer layer on Si (111), both using Molecular Beam Epitaxy. Photovoltaic IR-detectors are formed by deposition of a blocking Pb contact on the p-type semiconducting surface. We fabricated staggered linear sensor arrays with up to 2 X 128 pixels and with the cut off ranging from 3 to 12 micrometers . For demonstration, we built up a simple thermal camera using our detector arrays as the IR sensitive element. The read out is done using a new multiplexed direct injection device, capable to store large charge packages and offering individual biasing for each diode. The IR-diodes are fabricated monolithically on the completely finished readout chip.

Citation Download Citation

Jiri Masek, Taizo J. Hoshino, Clau Maissen, Hans Zogg, Stefan Blunier, Jan P. Vermeiren, and Cor L. Claeys "Monolithic lead-chalcogenide IR-diode arrays on silicon: fabrication and use in thermal imaging applications", Proc. SPIE 1735, Infrared Detectors: State of the Art, (10 December 1992); https://doi.org/10.1117/12.138640

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available