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10 December 1992 Si-based quantum-well intersubband detectors
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The strained layer Si1-xGex/Si heterostructures and multiple quantum well structures have created a great deal of interest due to the potential of monolithic integration with the conventional silicon VLSI signal processing technology. For infrared detection application, the intersubband transition using Si1-xGex/Si offers normal incident detection possibilities in contrast with that of AlGaAs/GaAs. In this paper, we will first discuss the principle and applications of Si and SiGe quantum well structures for infrared detection using intersubband transition. The physics of intersubband transition in Si-based quantum wells and superlattices will then be described for both n-type and p-type materials. Several normal incidence detection mechanisms will be illustrated: namely, from nonvanishing off-diagonal elements of the effective mass tensor in n-type and intervalence band transition for p-type in addition to free carrier absorption. The effect of the strain in determining the occupancy of the valleys will be described. The experimental results of normal incidence intersubband transition in SiGe/Si quantum wells and (delta) -doped Si layers are compared with the theoretical calculation of oscillator strength. The importance of many-body effects in determination of transition energy in very heavily doped structures and (delta) -doped layers, will also be shown for tuning of a wide range of transition energy (from 2 micrometers to tens of micrometers and perhaps longer). Finally, infrared detector structures using SiGe/Si multiple quantum well structures will be illustrated.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kang Lung Wang and R. P. Gamani Karunasiri "Si-based quantum-well intersubband detectors", Proc. SPIE 1735, Infrared Detectors: State of the Art, (10 December 1992);

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