Electron Beam Lithography For Maskmaking

Kenneth Wishnuff

doi:10.1117/12.957182

17 July 1979 Electron Beam Lithography For Maskmaking

Kenneth Wishnuff

Proceedings Volume 0174, Developments in Semiconductor Microlithography IV; (1979) https://doi.org/10.1117/12.957182
Event: Developments in Semiconductor Microlithography IV, 1979, San Jose, United States

Abstract

At this point in time, some thirteen companle-73 have manufacturing electron beam exposure systems. In view of that fact, I feel it is time that the current practical realities of e-beam be presented to the rest of the industry. It is the purpose of this talk to present those realities and make some projections for the future. Capabilities for defect density, critical dimension uniformity, overlay registration and other mask related parameters will be discussed and quantified. Manufacturing considerations from design to the finished mask will be examined.

Citation Download Citation

Kenneth Wishnuff "Electron Beam Lithography For Maskmaking", Proc. SPIE 0174, Developments in Semiconductor Microlithography IV, (17 July 1979); https://doi.org/10.1117/12.957182

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available