Paper
20 November 1992 ESR of diamondlike nuclei created in Si surface by C ion implantation
Tomio Izumi, Y. Show, Norio Arai, Masahiro Deguchi, Makoto Kitabatake, Akihisa Yoshida, Takashi Hirao, Yusuke Mori, T. Ito, Akio Hiraki
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Abstract
The defect structures of Si surface layer modified by high dose carbon ion implantation have been studied by ESR (electron spin resonance) method. The ESR analysis revealed the presence of three paramagnetic defects, that is, Si-dangling bonds (g=2.0060, Hpp =6.3 Oe) in Si amorphous region caused by the implantation, Si-dangling bonds with C atom neighbors (g=2.0035, LHpp =6.8 Oe) and C-dangling bond with C atoms neighbors. Moreover, it was found that the tight diamond-like C-C bonds are formed in the implanted Si surface layer. The diamond-like C-C bonds have an important role in obtaining high quality synthesized CVD diamonds.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tomio Izumi, Y. Show, Norio Arai, Masahiro Deguchi, Makoto Kitabatake, Akihisa Yoshida, Takashi Hirao, Yusuke Mori, T. Ito, and Akio Hiraki "ESR of diamondlike nuclei created in Si surface by C ion implantation", Proc. SPIE 1759, Diamond Optics V, (20 November 1992); https://doi.org/10.1117/12.130761
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KEYWORDS
Diamond

Silicon

Silicon carbide

Ions

Carbon

Chemical species

Chemical vapor deposition

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