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5 January 1993 High-performance 1040- x 1040-element PtSi Schottky-barrier image sensor
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Abstract
We have developed a monolithic 1040 X 1040 element PtSi Schottky-barrier infrared image sensor. This device uses the Charge Sweep Device readout architecture with four parallel outputs. The pixel size is 17 X 17 micrometers 2, which is 56% of that of our 512 X 512 element PtSi image sensor. In order to keep sufficient sensitivity with such a small pixel, we have developed a 1.5 micrometers Schottky-barrier process technology and improved the fill factor. The fill factor of this device is 53%. As a result of this improvement, a high differential temperature response of 9.6 X 103 electrons/K and a low noise equivalent temperature difference of 0.1 K have been achieved with f/1.2 optics. We have also improved the saturation characteristics of the device by optimizing the impurity concentrations of the isolation region and guard ring. The saturation level is 1.6 X 106 electrons at a detector reset voltage of 4 V.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masafumi Kimata, Naoki Yutani, Natsuro Tsubouchi, and Toshiki Seto "High-performance 1040- x 1040-element PtSi Schottky-barrier image sensor", Proc. SPIE 1762, Infrared Technology XVIII, (5 January 1993); https://doi.org/10.1117/12.138975
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