Fabry-Perot optical intensity modulator using merged epitaxial lateral overgrowth silicon films

HanChieh Chao; Gerold W. Neudeck

doi:10.1117/12.140953

2 September 1992 Fabry-Perot optical intensity modulator using merged epitaxial lateral overgrowth silicon films

HanChieh Chao, Gerold W. Neudeck

Proceedings Volume 1779, Optical Design and Processing Technologies and Applications; (1992) https://doi.org/10.1117/12.140953
Event: Optical Engineering Midwest 1992, 1992, Chicago, IL, United States

Abstract

This research uses merged epitaxial lateral overgrowth (MELO) of crystalline silicon combined with a multi-dielectric layers as a high reflection mirror; resulting in high-quality silicon Fabry-Perot cavity with well-controlled cavity length and high Finesse. The MELO technique has been employed in the development of novel devices such as accelerometers and pressure sensors. Also, the same growing techniques, selective epitaxial growth (SEG) and epitaxial lateral overgrowth (ELO), have already been applied in development of three dimensional MOS and bipolar transistors. Hence this cavity forming technique is integrated circuit compatible.

Citation Download Citation

HanChieh Chao and Gerold W. Neudeck "Fabry-Perot optical intensity modulator using merged epitaxial lateral overgrowth silicon films", Proc. SPIE 1779, Optical Design and Processing Technologies and Applications, (2 September 1992); https://doi.org/10.1117/12.140953

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