Physical and technological aspects of anomalous current-voltage characteristics of Schottky diodes at low temperatures

Zsolt J. Horvath

doi:10.1117/12.131052

1 August 1992 Physical and technological aspects of anomalous current-voltage characteristics of Schottky diodes at low temperatures

Zsolt J. Horvath

Author Affiliations +

Proceedings Volume 1783, International Conference of Microelectronics: Microelectronics '92; (1992) https://doi.org/10.1117/12.131052
Event: International Conference on Microelectronics, 1992, Warsaw, Poland

Abstract

Schottky diodes often exhibit anomalous current-voltage characteristics at low temperatures with temperature dependent ideality factors and apparent barrier heights evaluated for the thermionic emission. In this paper theoretical expressions are first presented for the temperature dependencies of the ideality factor and the apparent barrier height for the thermionic-field (T-F) emission, including the bias dependence of barrier height. Expressions are also presented to evaluate the characteristic energy E_oo and the bias dependence of barrier height from the temperature dependence of the ideality factor. Model calculations have been performed using these expressions, and their results are compared with the available experimental data. It is shown that the mechanism responsible for the temperature dependent ideality factors and apparent barrier heights often is the T-F emission with anomalously high characteristic energies. The possible causes of the high characteristic energies are discussed.

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Zsolt J. Horvath "Physical and technological aspects of anomalous current-voltage characteristics of Schottky diodes at low temperatures", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); https://doi.org/10.1117/12.131052

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