CMOS/SOS LSI For Real-Time Signal Processing

Ross M. Orndorff; Daryl T. Butcher

doi:10.1117/12.957330

21 September 1979 CMOS/SOS LSI For Real-Time Signal Processing

Ross M. Orndorff, Daryl T. Butcher

Proceedings Volume 0180, Real-Time Signal Processing II; (1979) https://doi.org/10.1117/12.957330
Event: Technical Symposium East, 1979, Washington, D.C., United States

Abstract

"These are interesting times in which we live" is an addage we have all heard oft repeated, but it has never been more true than in the technology explosion presently permeating the semiconductor industry. Rapid advances in processing, photolithography, and computeraided design (CAD) techniques are making possible semiconductor devices with performance characteristics heretofore considered impossible. This paper reviews some of the outstanding performance characteristics achieved with silicon-gate complementary-MOS (CMOS) fabricated on a sapphire substrate (CMOS/SOS). Three CMOS/SOS LSI devices, recently developed at the Electronics Research Center, are reviewed to demonstrate the strengths of the Rockwell technology. A 12-bit analog/digital (A/D) converter device(1) highlights the analog capabilities of the 4-micron technology. High-speed digital characteristics of the 3-micron technology are demonstrated by a CMOS/SOS frequency synthesizer.( 293) Tight packaging densities (1 square mil per transistor), high speed (800 picoseconds), low-power (0.2 picojoules) characteristics provided by the 2- micron technology are demonstrated by the Viterbi LSI device.( 4) CAD capability( S) greatly facilitating LSI design, analysis, layout and layout verification is also discussed briefly. Finally, the plans for both production and continued development of the CMOS/SOS technology are presented.

Citation Download Citation

Ross M. Orndorff and Daryl T. Butcher "CMOS/SOS LSI For Real-Time Signal Processing", Proc. SPIE 0180, Real-Time Signal Processing II, (21 September 1979); https://doi.org/10.1117/12.957330

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