Failure analysis for improved electromigration performance

Kevin Hussey; E. Widener; Mark Fernandes; Kuan Yu Fu; Tom Guckert

doi:10.1117/12.139344

14 January 1993 Failure analysis for improved electromigration performance

Kevin Hussey, E. Widener, Mark Fernandes, Kuan Yu Fu, Tom Guckert

Proceedings Volume 1802, Microelectronics Manufacturing and Reliability; (1993) https://doi.org/10.1117/12.139344
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

The development of a metallization process with optical resistance to electromigration is, by nature, an iterative process. Accelerated stressing of metal test patterns allow quantitative comparison of the electromigration performance of metal fabricated with experimental processes. Understanding of structural differences between process alternatives can be enhanced by physical characterization of unstressed samples. Failure analysis of stressed structures provides insight into the relationship of these differences to the physical failure mechanisms. The analyses which identified process modifications to achieve improved electromigration performance are discussed.

Citation Download Citation

Kevin Hussey, E. Widener, Mark Fernandes, Kuan Yu Fu, and Tom Guckert "Failure analysis for improved electromigration performance", Proc. SPIE 1802, Microelectronics Manufacturing and Reliability, (14 January 1993); https://doi.org/10.1117/12.139344

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