New method for etching rate and resist profile control in O2RIE

Yasuki Kimura; Ryouichi Aoyama; Seki Suzuki; Hiroshi Ohtsuka

doi:10.1117/12.142908

16 April 1993 New method for etching rate and resist profile control in O₂RIE

Yasuki Kimura, Ryouichi Aoyama, Seki Suzuki, Hiroshi Ohtsuka

Proceedings Volume 1803, Advanced Techniques for Integrated Circuit Processing II; (1993) https://doi.org/10.1117/12.142908
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

This paper describes a new method for etching rate and resist profile control in O₂RIE. The method simply determines the equivalent process conditions for different device layers with various areas of the material to be etched (etchable area) by introducing the ratio of the etchable area to the flow rate defined as S/F parameter. The concept of this method is that the gas composition controlled by S/F parameter determines both the etching rate and the resist profile under the constant energy flux densities of ions and energetic neutrals (ion impact density). S/F parameter is introduced through the extended expressions of Mogab's loading effect theory by applying two important characteristics in O₂RIE: (1) The dominant etchant is oxygen molecules. (2) The etching rate is proportional to the ion impact density. The etching rate and the gas composition are expressed as functions of S/F parameter and the ion impact density in the extended expressions. The etching rate and the resist profile have been controlled by applying this method to wafer samples with various etchable areas. Furthermore, a linear relationship between the etching rate and the resist profile is clarified.

Citation Download Citation

Yasuki Kimura, Ryouichi Aoyama, Seki Suzuki, and Hiroshi Ohtsuka "New method for etching rate and resist profile control in O₂RIE", Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); https://doi.org/10.1117/12.142908

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available