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16 April 1993 Profiles and chemistry effects in polysilicon and tungsten silicide EPROM "stack" etching
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Proceedings Volume 1803, Advanced Techniques for Integrated Circuit Processing II; (1993) https://doi.org/10.1117/12.142922
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States
Abstract
Specialized EPROM cell architectures lead to a host of new difficulties during pattern transfer. Results from patterning stacked gate structure multilayers of WSix, polysilicon, SiO2 and Si3N4 with etching chemistries containing HBr and Cl2 are examined. Strong effects arising from changes in feed composition and wafer temperature are discussed along with some basic mechanisms involved in these interactions.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Daniel L. Flamm, Reza M. Sadjadi, and Jeff R. Perry "Profiles and chemistry effects in polysilicon and tungsten silicide EPROM "stack" etching", Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); https://doi.org/10.1117/12.142922
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