Paper
16 March 1993 Forming of "contact window" submicron topological structure by laser vacuum lithography
Anatoly I. Sharendo, Victor V. Boksha, Eduard I. Tochitsky, Vyjacheslav E. Obukhov
Author Affiliations +
Proceedings Volume 1804, Rapid Thermal and Laser Processing; (1993) https://doi.org/10.1117/12.142082
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States
Abstract
This paper offers the results of investigations of forming the submicron topological structures of the 'contact window'-type by using only all-dry vacuum and plasmas technologies. A technological process of manufacturing a three-layer structure 'metal-dielectric-metal' by using the LVPL is developed to study electrical characteristic of systems with micron and submicron contact windows. The contact resistance versus contact window dimensions obtained with the aid of such structures is the inverse square dependence which correlates well with the calculated one. Analysis is made of the relationship between lithographic and electric parameters of contact systems with micron-size features.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anatoly I. Sharendo, Victor V. Boksha, Eduard I. Tochitsky, and Vyjacheslav E. Obukhov "Forming of "contact window" submicron topological structure by laser vacuum lithography", Proc. SPIE 1804, Rapid Thermal and Laser Processing, (16 March 1993); https://doi.org/10.1117/12.142082
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KEYWORDS
Oxides

Silicon

Photomasks

Lithography

Resistance

Aluminum

Laser processing

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