Paper
21 May 1993 Barrier layer effects and the use of Ti:W capping layers on the electromigration performance of Al-Si(1%)-Cu(0.5%) alloy
Jeff S. May, Dave J. Yost, Carole D. Graas, Joe W. McPherson
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Abstract
Electromigration performance is investigated for Al-Si(1%)-Cu(0.5%) alloy on a CVD-W or Ti:W barrier layer, and the effectiveness of a Ti:W capping layer to suppress electromigration is explored. Compared to a Ti:W barrier layer, the surface roughness of the CVD-W barrier layer degrades electromigration performance, however, a capping layer of Ti:W sequentially sputtered on top of the aluminum-alloy will substantively improve the electromigration performance when either barrier layer system is used. The improvement is observed to increase with the thickness of the Ti:W capping layer. Investigations of the failure kinetics and material properties indicate the EM performance improvement is primarily due to changes in the Al-alloy micro-structure.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeff S. May, Dave J. Yost, Carole D. Graas, and Joe W. McPherson "Barrier layer effects and the use of Ti:W capping layers on the electromigration performance of Al-Si(1%)-Cu(0.5%) alloy", Proc. SPIE 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations, (21 May 1993); https://doi.org/10.1117/12.145473
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KEYWORDS
Metals

Resistance

Surface roughness

Aluminum

Failure analysis

Oxides

Semiconducting wafers

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