Highly reliable high-temperature aluminum sputter metallization

Hiroshi Nishimura; Takashi Kouzaki; Tatsuya Yamada; Robert Sinclair; Shin-ichi Ogawa

doi:10.1117/12.145455

21 May 1993 Highly reliable high-temperature aluminum sputter metallization

Hiroshi Nishimura, Takashi Kouzaki, Tatsuya Yamada, Robert Sinclair, Shin-ichi Ogawa

Proceedings Volume 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations; (1993) https://doi.org/10.1117/12.145455
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

A highly reliable high-temperature Al-Si-Cu sputter metallization, employing a Ti underlayer to prevent Si from precipitating has been developed, and complete filling of 0.15 micrometers diameter vias with aspect ratio of 4.5 has been achieved. Degree of filling and via chain resistance were improved by increasing the Ti underlayer thickness. This is probably because of improvement in wettability of Al on via sidewall, which is caused by uniform interfacial reaction between Ti underlayers and Al-Si-Cu films. Transmission electron microscopy (TEM) combined with micro energy dispersive spectrometry (EDS) analysis revealed that reacted ball-like precipitates exist at the interface between the first metal and the second metal lines in the filled via, and that the precipitates particles are Al-Ti-Si compounds. No Si precipitation was observed in areas away from or near to the particles. Also, it was found that Al films in the vias consist of one or two single crystalline <111> textured normal to a substrate. The electrical resistance for the 0.3 micrometers sputter filled via was 0.71 (Omega) , which is about one order of magnitude lower than that for a non-filled (conventional) via. The electromigration (EM) resistance of 0.3 micrometers filled vias was found to be four orders of magnitude greater than that for the 0.3 micrometers conventional vias. Furthermore, we confirmed that the EM resistance for the 0.3 micrometers filled via is comparable to the 0.9 micrometers conventional via. Superior EM and stress-induced migration (SM) resistance for the lines have been confirmed.

Citation Download Citation

Hiroshi Nishimura, Takashi Kouzaki, Tatsuya Yamada, Robert Sinclair, and Shin-ichi Ogawa "Highly reliable high-temperature aluminum sputter metallization", Proc. SPIE 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations, (21 May 1993); https://doi.org/10.1117/12.145455

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