Optically induced electronic nonlinearities and modulation in an InGaAs SQW waveguide at 1.5-um wavelength

Jeffrey E. Ehrlich; David T. Neilson; Andrew C. Walker

doi:10.1117/12.147938

28 June 1993 Optically induced electronic nonlinearities and modulation in an InGaAs SQW waveguide at 1.5-μm wavelength

Jeffrey E. Ehrlich, David T. Neilson, Andrew C. Walker

Proceedings Volume 1807, Photonic Switching; (1993) https://doi.org/10.1117/12.147938
Event: Topical Meeting on Photonic Switching, 1992, Minsk, Belarus

Abstract

We report measurements of optically induced refractive index changes and their saturation, in an InGaAs single quantum well, centered within a linear multiple quantum well waveguide Fabry-Perot resonator using diode laser sources. A small-signal nonlinear refractive cross- section (sigma) _n equals -8 X 10^-20 cm³ was deduced for probe wavelengths near the TE absorption edge, and (sigma) _n equals -4 X 10^-20 cm³, 100 nm from the bandedge.

Citation Download Citation

Jeffrey E. Ehrlich, David T. Neilson, and Andrew C. Walker "Optically induced electronic nonlinearities and modulation in an InGaAs SQW waveguide at 1.5-μm wavelength", Proc. SPIE 1807, Photonic Switching, (28 June 1993); https://doi.org/10.1117/12.147938

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