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23 October 1992 Semiconductor optical switch with MOCVD-grown low-barrier quantum wells
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Proceedings Volume 1813, Optoelectronic Component Technologies; (1992) https://doi.org/10.1117/12.131238
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan
Abstract
A successful fabrication of semiconductor optical switch, similar in function to the self- electro-optic effect devices, is reported for the first time from MOCVD-grown GaAs/AlGaAs low barrier quantum well pin diodes (Al fraction, x equals 4%). A reflective 16 X 8 switch array and its performance are also reported. The maximum contrast ratio was found to be 2.9:1 at 5 V bias.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. K. Kim, Seung-Won Lee, T. M. Kim, Kwang-uk Chu, O'Dae Kwon, Mun Seok Jeong, B. K. Kang, and Kwang Nham Kang "Semiconductor optical switch with MOCVD-grown low-barrier quantum wells", Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); https://doi.org/10.1117/12.131238
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