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26 October 1992 Narrowband self-filtering GaAs photodetector characterized by hi-lo-hi np junction
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Proceedings Volume 1814, Optical Sensors; (1992)
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan
Narrowband self-filtering GaAs photodiode has been fabricated by LPE growth. N-type epitaxial layers of hi-lo-hi structure were grown on P-type substrate. By properly controlling the thickness and the doping concentration of the epilayers efficient blue suppression of the detector response is achievable, with a bandwidth as narrow as 315 angstroms centered at 880 nm. The device, therefore, is very useful in many applications which require background suppression and spectral matching to the correspondent LED light source.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jin-Shown Shie, Jonathan S. Li, Fei-Chang Hwang, and Heidi T. Wang "Narrowband self-filtering GaAs photodetector characterized by hi-lo-hi np junction", Proc. SPIE 1814, Optical Sensors, (26 October 1992);

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