Electroluminescent devices with different insulator/semiconductor interfaces prepared by rf sputtering

Chin-Tsar Hsu; Yan-Kuin Su; Meiso Yokoyama

doi:10.1117/12.131327

27 October 1992 Electroluminescent devices with different insulator/semiconductor interfaces prepared by rf sputtering

Chin-Tsar Hsu, Yan-Kuin Su, Meiso Yokoyama

Proceedings Volume 1815, Display Technologies; (1992) https://doi.org/10.1117/12.131327
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan

Abstract

In order to evaluate the interface properties of TFEL with stacked layer insulator structure, four kinds of samples with different insulating layers have been studied. It was found that the EL device with a glass/indium tin oxide/BaTiO₃/ZnS:TbF₃/HfO₂/Ta₂O₅/HfO₂/Al structure exhibited higher brightness and higher efficiency than the other devices.

Citation Download Citation

Chin-Tsar Hsu, Yan-Kuin Su, and Meiso Yokoyama "Electroluminescent devices with different insulator/semiconductor interfaces prepared by rf sputtering", Proc. SPIE 1815, Display Technologies, (27 October 1992); https://doi.org/10.1117/12.131327

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