Photoacoustic imaging of semiconductor structures

Jerzy Bodzenta; Barbara M. Pustelny; Zygmunt Kleszczewski

doi:10.1117/12.131925

25 November 1992 Photoacoustic imaging of semiconductor structures

Jerzy Bodzenta, Barbara M. Pustelny, Zygmunt Kleszczewski

Proceedings Volume 1844, Acousto-Optics and Applications; (1992) https://doi.org/10.1117/12.131925
Event: Acousto-Optics and Applications, 1992, Gdansk-Jurata, Poland

Abstract

In the report an experimental apparatus for photoacoustic imaging is described. Results of testing measurements and investigation of ion-implanted silicon wafer were presented. Obtained results show possibilities of photoacoustic imaging of ion-implanted regions in semiconductors with good resolution. Strong dependence of the resolution on frequency was demonstrated.

Citation Download Citation

Jerzy Bodzenta, Barbara M. Pustelny, and Zygmunt Kleszczewski "Photoacoustic imaging of semiconductor structures", Proc. SPIE 1844, Acousto-Optics and Applications, (25 November 1992); https://doi.org/10.1117/12.131925

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