Nonequilibrium behavior and defect diffusion in laser heating of semiconductors

Woei-Yun Ho; Chun Chi Ma; Rodger M. Walser; Michael F. Becker

doi:10.1117/12.147420

24 June 1993 Nonequilibrium behavior and defect diffusion in laser heating of semiconductors

Woei-Yun Ho, Chun Chi Ma, Rodger M. Walser, Michael F. Becker

Proceedings Volume 1848, 24th Annual Boulder Damage Symposium Proceedings -- Laser-Induced Damage in Optical Materials: 1992; (1993) https://doi.org/10.1117/12.147420
Event: Optical Materials for High Power Lasers, 1992, Boulder, CO, United States

Abstract

A new theoretical framework for modeling the nonlinear laser heating of semiconductors is presented by incorporating the dynamical behavior of semiconductors; the temperature-carrier coupling, the generation and recombination of defects, the diffusion of defects, the diffusion of impurities by defect-dopant pair mechanism, and chemical reaction between species. In this study, we apply our model to n-type silicon irradiated by a nanosecond pulsed Nd:YAG laser. The dynamical evolution of laser-semiconductor interaction process is examined by calculation of carrier, defect, and impurity concentration profiles.

Citation Download Citation

Woei-Yun Ho, Chun Chi Ma, Rodger M. Walser, and Michael F. Becker "Nonequilibrium behavior and defect diffusion in laser heating of semiconductors", Proc. SPIE 1848, 24th Annual Boulder Damage Symposium Proceedings -- Laser-Induced Damage in Optical Materials: 1992, (24 June 1993); https://doi.org/10.1117/12.147420

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