Use of Raman spectroscopy in characterizing soft x-ray multilayers: tools in understanding structure and interfaces

Ming Cai; Qi Wang; David D. Allred; Larry V. Knight; Dorian M. Hatch; Arturo Reyes-Mena; Guizhong Zhang

doi:10.1117/12.147396

24 June 1993 Use of Raman spectroscopy in characterizing soft x-ray multilayers: tools in understanding structure and interfaces

Ming Cai, Qi Wang, David D. Allred, Larry V. Knight, Dorian M. Hatch, Arturo Reyes-Mena, Guizhong Zhang

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Proceedings Volume 1848, 24th Annual Boulder Damage Symposium Proceedings -- Laser-Induced Damage in Optical Materials: 1992; (1993) https://doi.org/10.1117/12.147396
Event: Optical Materials for High Power Lasers, 1992, Boulder, CO, United States

Abstract

Our group is studying the structure and interfaces of soft x-ray multilayers by various techniques including x-ray diffraction and Raman spectroscopy. Raman spectroscopy is particularly useful since it is sensitive to the identity of individual bonds and thus can potentially characterize the abruptness of interfaces in multilayers. Blocking interfacial mixing is very important in achieving and maintaining high reflectivity. We report our studies of the as-deposited and postannealed structure of Mo/Si and W/C multilayers. A high normal- incidence, peak reflectance is mandatory for imaging applications that involve many reflections. The reported theoretical and achieved reflectances of the Mo/Si system are 80% and 65%, respectively. This loss of 15% can bring about a six-fold loss in system throughput in the eight-reflection system contemplated. The interfaces in the Mo/Si system are thought to play a significant role in the degrading reflectance so characterization techniques which have interfacial sensitivity are particularly important. The Mo/Si multilayer system is susceptible to Raman characterization since both the a-Si spacer layer and the MoSi₂ compound which forms at the interface have Raman active modes. In this paper we report the first Raman studies, to the best of our knowledge, of the a-Si layers and their crystallization and the crystallization of the Mo/Si interface of the multilayer brought about by a one-hour 1000 degree(s)C anneal. These changes are apparent in the Raman spectra before they can be unambiguously detected by x-ray diffraction.

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Ming Cai, Qi Wang, David D. Allred, Larry V. Knight, Dorian M. Hatch, Arturo Reyes-Mena, and Guizhong Zhang "Use of Raman spectroscopy in characterizing soft x-ray multilayers: tools in understanding structure and interfaces", Proc. SPIE 1848, 24th Annual Boulder Damage Symposium Proceedings -- Laser-Induced Damage in Optical Materials: 1992, (24 June 1993); https://doi.org/10.1117/12.147396

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KEYWORDS

Raman spectroscopy

Multilayers

Annealing

Silicon

Interfaces

Crystals

X-rays

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