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16 June 1993 Are InAlGaAs strained-layer quantum-well lasers more reliable?
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Proceedings Volume 1850, Laser Diode Technology and Applications V; (1993) https://doi.org/10.1117/12.146908
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
Laser diodes and superluminescent diodes have been fabricated using epitaxial structures employing a strained quantum well of InAlGaAs. These devices emit at wavelengths in the 800 - 900 nm range commonly addressed using unstrained GaAs quantum well structures. Results are presented which indicate that the strained layer devices exhibit a marked immunity from sudden unexpected ('freak') failure modes.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard F. Murison, Alan H. Moore, Nigel Holehouse, and Shuyen R. Lee "Are InAlGaAs strained-layer quantum-well lasers more reliable?", Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); https://doi.org/10.1117/12.146908
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