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16 June 1993 High-power InGaAs-GaAs 1064 nm strained-layer lasers by metalorganic chemical vapor deposition (MOCVD)
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Proceedings Volume 1850, Laser Diode Technology and Applications V; (1993) https://doi.org/10.1117/12.146900
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
We describe the design, growth by atmospheric pressure metalorganic chemical vapor deposition (MOCVD), processing and characterization of single quantum well separate confinement strained layer InGaAs-GaAs quantum well lasers designed for high power operation at emission wavelengths near 1064 nm. Threshold current density is reduced by 39% for long cavity devices through design optimization. Broad area lasers operate at high cw (> 5 W) and pulsed (> 20 W) powers, with low threshold current density and high power conversion efficiency. Index guided ridge waveguide lasers show stable single spatial mode operation over a wide range of output power and temperature.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Timothy M. Cockerill, David V. Forbes, James J. Coleman, K. J. Beernink, Richard F. Murison, and Alan H. Moore "High-power InGaAs-GaAs 1064 nm strained-layer lasers by metalorganic chemical vapor deposition (MOCVD)", Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); https://doi.org/10.1117/12.146900
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