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24 June 1993 Molecular beam epitaxy technology for selective area embedded InGaAs layers in InP substrates
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Proceedings Volume 1851, Processing and Packaging of Semiconductor Lasers and Optoelectronic Devices; (1993) https://doi.org/10.1117/12.147593
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
The selective area MBE deposition of InGaAs in InP substrates is reported. Successful selective growth of InGaAs in pre-ion etched windows of InP has been achieved utilizing a SILOX mask and lift-off techniques of polycrystalline InGaAs field layers. The optical quality of these epitaxial InGaAs windows was comparable to material deposited on non-patterned InP. An optimized pre-growth heat treatment of InP was very crucial in order to achieve the smooth InGaAs surface morphologies and excellent optical properties. Finally, no significant irregularities were observed at the InGaAs window edges, the alloy composition appeared uniform in the entire window areas and the incorporation of impurities from the SILOX was minimized.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexandros Georgakilas, Aristos Christou, K. Zekentes, K. Tsagaraki, G. Halkias, Pierre Lefebvre, and Jacques Allegre "Molecular beam epitaxy technology for selective area embedded InGaAs layers in InP substrates", Proc. SPIE 1851, Processing and Packaging of Semiconductor Lasers and Optoelectronic Devices, (24 June 1993); https://doi.org/10.1117/12.147593
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