Diode pumping of LaxNd1-xMgAl11O19 lasers

Jun Xu; Guangzhao Wu; Yafang Shen; Xinmin Zhang; Xiurong Zhang; Shaoting Gu

doi:10.1117/12.146936

16 June 1993 Diode pumping of La_xNd_1-xMgAl₁₁O₁₉ lasers

Jun Xu, Guangzhao Wu, Yafang Shen, Xinmin Zhang, Xiurong Zhang, Shaoting Gu

Proceedings Volume 1865, Diode Pumping of Average-Power Solid State Lasers; (1993) https://doi.org/10.1117/12.146936
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States

Abstract

Compared to other Nd³⁺ doped materials such as YAG:Nd³⁺, YAP:Nd³⁺, and YLF:Nd³⁺, crystal La_xNd_1-xMgAl₁₁O₁₉ (LNA) has relatively much higher Nd concentration, long upper state lifetime, and large absorption bandwidths. LNA crystals have been pumped by laser diode arrays emitting around 800 nm. High-quality LNA crystals for this purpose have been grown.

Citation Download Citation

Jun Xu, Guangzhao Wu, Yafang Shen, Xinmin Zhang, Xiurong Zhang, and Shaoting Gu "Diode pumping of La_xNd_1-xMgAl₁₁O₁₉ lasers", Proc. SPIE 1865, Diode Pumping of Average-Power Solid State Lasers, (16 June 1993); https://doi.org/10.1117/12.146936

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