Paper
9 June 1993 Investigation of the temperature and electric field dependence of a GaAs microwave photoconductive switch
Stephen E. Saddow, Bruno J. Thedrez, Sheng-Lung L. Huang, Timothy J. Mermagen, Chi Hsiang Lee
Author Affiliations +
Proceedings Volume 1873, Optically Activated Switching III; (1993) https://doi.org/10.1117/12.146555
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
The on-resistance of a GaAs coplanar waveguide-photoconductive switch was characterized as a function of laser photon energy, switch temperature, and applied dc electric field. An electric-field-dependent resonance at photon energies near the GaAs energy band-gap edge has been observed. This resonant behavior is believed to be caused by a competition between carrier recombination in the switch bulk and carrier sweep-out effects near the switch surface. This field-induced resonance was verified with 5, 10 and 20 micrometers switch gaps that were fabricated on three separate semi-insulating GaAs wafers. For fixed-wavelength laser sources, it has been shown that one can optimize the optical coupling by varying the switch temperature. The switch resistance decreased by a factor of three as a result of an increase in the switch temperature of 20 degree(s)C at photon energies near the absorption edge. A conductive-mode plasma model has been developed that adequately predicts the nonresonant switch behavior.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stephen E. Saddow, Bruno J. Thedrez, Sheng-Lung L. Huang, Timothy J. Mermagen, and Chi Hsiang Lee "Investigation of the temperature and electric field dependence of a GaAs microwave photoconductive switch", Proc. SPIE 1873, Optically Activated Switching III, (9 June 1993); https://doi.org/10.1117/12.146555
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Cited by 4 scholarly publications.
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KEYWORDS
Switches

Resistance

Gallium arsenide

Semiconductor lasers

Switching

Plasma

Absorption

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