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15 July 1993 Fabrication and characterization of thin film resistor arrays for infrared projector applications
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Proceedings Volume 1874, Infrared and Millimeter-Wave Engineering; (1993)
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Thin film resistor technology represents one of the more promising approaches to the problem of providing infrared projection capabilities, particularly when the requirement is for small arrays that operate at high speed at temperatures above 200 degree(s)C. In this paper, the fabrication and characterization of an infrared projector device based on a 2 X 36 thin film resistor array is described. Finite element heat analysis was used during the design phase in order to determine the steady state and transient temperature response of the array. The arrays were fabricated on a polyimide layer on a silicon wafer substrate by using conventional techniques for photolithography, etching, and vacuum deposition. Each resistor element in the array is thermally isolated from its neighboring element by a trench in the polyimide. Characterization of the individual resistors has demonstrated a surface temperature of at least 230 degree(s)C. A transient response of 150 microsecond(s) has been observed for the 10 - 90% rise and fall times.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gim T. Ong, Geoffrey K. Reeves, Shawn C. B. Garner, and Owen M. Williams "Fabrication and characterization of thin film resistor arrays for infrared projector applications", Proc. SPIE 1874, Infrared and Millimeter-Wave Engineering, (15 July 1993);

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