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14 September 1993 Large area, flat-panel a-Si:H arrays for x-ray imaging
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The development of a large-area amorphous silicon array for x-ray imaging is described. The array comprises pixels made up of amorphous silicon transistors and photodiode sensors with a pixel-to-pixel pitch of 450 micrometers . With a format of 512 X 560 pixels, the array has an area of 23 by 25 cm2 making it the largest self-scanning, solid-state, pixelated imaging device ever reported. The first diagnostic x-ray images from such a large area device are demonstrated and a general review of the current state of this technology is given. The properties of such arrays are summarized and future anticipated developments discussed.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Larry E. Antonuk, John Yorkston, Weidong Huang, John M. Boudry, E. J. Morton, and Robert A. Street "Large area, flat-panel a-Si:H arrays for x-ray imaging", Proc. SPIE 1896, Medical Imaging 1993: Physics of Medical Imaging, (14 September 1993);

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